5kp5.0 thru 5kp110a vishay semiconductors document number 88308 www.vishay.com 14-jan-02 1 transzorb transient voltage supressors stand-off voltage 5.0 to 110 v peak pulse power 5000w case style p600 0.052 (1.32) 0.048 (1.22) 0.360 (9.1) 0.340 (8.6) dia. 1.0 (25.4) min. 0.360 (9.1) 0.340 (8.6) 1.0 (25.4) min. dimensions in inches and (millimeters) features ?plastic package has underwriters laboratory flammability classification 94v-0 ?glass passivated junction ?5000w peak pulse power capability with a 10/1000 s waveform, repetition rate (duty cycle): 0.05% ?excellent clamping capability ?low incremental surge resistance ?very fast response time devices with v (br) > 10v i d are typically less than 1.0 a mechanical data case: molded plastic body over glass passivated junction terminals: solder plated axial leads, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 265?/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension polarity: for uni-directional types, the color band denotes the cathode, which is positive with respect to the anode under normal tvs operation mounting position: any weight: 0.07oz., 2.1g packaging codes/options: 1/750 ea. per bulk box 4/800 ea. per 13 reel (52mm tape) 23/300 ea. per ammo box (52mm tape) maximum ratings and characteristics ratings at 25? unless otherwise noted. parameter symbol value unit peak pulse power dissipation with a 10/1000? waveform (1) p ppm minimum 5000 w peak pulse current with a 10/1000? waveform (1) i ppm see next table a steady state power dissipation at t l = 75? p m(av) 8.0 w lead lengths 0.375 (9.5mm) (2) peak forward surge current, 8.3ms single half sine-wave (3) i fsm 500 a instantaneous forward voltage at 100a (3) v f 3.5 v operating junction and storage temperature range t j , t stg 55 to +175 ? notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25? per fig. 2. (2) mounted on copper pad area of 1.6 x 1.6 (40 x 40mm) per fig. 5. (3) measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
5kp5.0 thru 5kp110a vishay semiconductors www.vishay.com document number 88308 2 14-jan-02 electrical characteristics t a = 25 c unless otherwise noted maximum maximum maximum maximum breakdown voltage test stand-off reverse peak pulse clamping temperature v (br) current voltage leakage current voltage at coefficient (v) (1) at i t v wm at v wm i ppm (2) i ppm of v (br) device type min max (ma) (v) i d (?) (a) v c (v) (% / c) 5kp5.0 6.40 7.30 50 5.0 2000 521 9.6 0.057 5kp5.0a 6.40 7.00 50 5.0 2000 543 9.2 0.057 5kp6.0 6.67 8.15 50 6.0 5000 439 11.4 0.061 5kp6.0a 6.67 7.37 50 6.0 5000 485 10.3 0.061 5kp6.5 7.22 8.82 50 6.5 2000 407 12.3 0.065 5kp6.5a 7.22 7.98 50 6.5 2000 446 11.2 0.065 5kp7.0 7.78 9.51 50 7.0 1000 376 13.3 0.068 5kp7.0a 7.78 8.60 50 7.0 1000 417 12.0 0.068 5kp7.5 8.33 10.2 5.0 7.5 250 350 14.3 0.073 5kp7.5a 8.33 9.21 5.0 7.5 250 388 12.9 0.073 5kp8.0 8.89 10.9 5.0 8.0 150 333 15.0 0.075 5kp8.0a 8.89 9.83 5.0 8.0 150 368 13.6 0.075 5kp8.5 9.44 11.5 5.0 8.5 50 314 15.9 0.078 5kp8.5a 9.44 10.4 5.0 8.5 50 347 14.4 0.078 5kp9.0 10.0 12.2 5.0 9.0 20 296 16.9 0.081 5kp9.0a 10.0 11.1 5.0 9.0 20 325 15.4 0.081 5kp10 11.1 13.6 5.0 10.0 15 266 18.8 0.084 5kp10a 11.1 12.3 5.0 10.0 15 294 17.0 0.084 5kp11 12.2 14.9 5.0 11.0 10 249 20.1 0.086 5kp11a 12.2 13.5 5.0 11.0 10 275 18.2 0.086 5kp12 13.3 16.3 5.0 12.0 5.0 227 22.0 0.088 5kp12a 13.3 14.7 5.0 12.0 5.0 251 19.9 0.088 5kp13 14.4 17.6 5.0 13.0 2.0 210 23.8 0.090 5kp13a 14.4 15.9 5.0 13.0 2.0 233 21.5 0.090 5kp14 15.6 19.1 5.0 14.0 2.0 194 25.8 0.092 5kp14a 15.6 17.2 5.0 14.0 2.0 216 23.2 0.092 5kp15 16.7 20.4 5.0 15.0 2.0 186 26.9 0.094 5kp15a 16.7 18.5 5.0 15.0 2.0 205 24.4 0.094 5kp16 17.8 21.8 5.0 16.0 2.0 174 28.8 0.096 5kp16a 17.8 19.7 5.0 16.0 2.0 192 26.0 0.096 5kp17 18.9 23.1 5.0 17.0 2.0 164 30.5 0.097 5kp17a 18.9 20.9 5.0 17.0 2.0 181 27.6 0.097 5kp18 20.0 24.4 5.0 18.0 2.0 155 32.2 0.098 5kp18a 20.0 22.1 5.0 18.0 2.0 171 29.2 0.098 5kp20 22.2 27.1 5.0 20.0 2.0 140 35.8 0.099 5kp20a 22.2 24.5 5.0 20.0 2.0 154 32.4 0.099 5kp22 24.4 29.8 5.0 22.0 2.0 127 39.4 0.100 5kp22a 24.4 26.9 5.0 22.0 2.0 141 35.5 0.100 5kp24 26.7 32.6 5.0 24.0 2.0 116 43.0 0.101 5kp24a 26.7 29.5 5.0 24.0 2.0 129 38.9 0.101 5kp26 28.9 35.3 5.0 26.0 2.0 107 46.6 0.101 5kp26a 28.9 31.9 5.0 26.0 2.0 119 42.1 0.101 5kp26a 28.9 31.9 5.0 26.0 2.0 119 42.1 0.101 5kp28 31.1 38.0 5.0 28.0 2.0 100 50.1 0.102 5kp28a 31.1 34.4 5.0 28.0 2.0 110 45.4 0.102 5kp30 33.3 40.7 5.0 30.0 2.0 93.5 53.5 0.103 5kp30a 33.3 36.8 5.0 30.0 2.0 103 48.4 0.103 5kp33 36.7 44.9 5.0 33.0 2.0 84.7 59.0 0.104 5kp33a 36.7 40.6 5.0 33.0 2.0 93.8 53.3 0.104
5kp5.0 thru 5kp110a vishay semiconductors document number 88308 www.vishay.com 14-jan-02 3 electrical characteristics t a = 25 c unless otherwise noted maximum maximum maximum maximum breakdown voltage test stand-off reverse peak pulse clamping temperature v (br) current voltage leakage current voltage at coefficient (v) (1) at i t v wm at v wm i ppm (2) i ppm of v (br) device type min max (ma) (v) i d (?) (a) v c (v) (% / c) 5kp36 40.0 48.9 5.0 36.0 2.0 77.8 64.3 0.104 5kp36a 40.0 44.2 5.0 36.0 2.0 86.1 58.1 0.104 5kp40 44.4 54.3 5.0 40.0 2.0 70.0 71.4 0.105 5kp40a 44.4 49.1 5.0 40.0 2.0 77.5 64.5 0.105 5kp43 47.8 58.4 5.0 43.0 2.0 65.2 76.7 0.105 5kp43a 47.8 52.8 5.0 43.0 2.0 72.0 69.4 0.105 5kp45 50.0 61.1 5.0 45.0 2.0 62.3 80.3 0.106 5kp45a 50.0 55.3 5.0 45.0 2.0 68.8 72.7 0.106 5kp48 53.3 65.2 5.0 48.0 2.0 58.5 85.5 0.106 5kp48a 53.3 58.9 5.0 48.0 2.0 64.6 77.4 0.106 5kp51 56.1 69.3 5.0 51.0 2.0 54.9 91.1 0.107 5kp51a 56.7 62.7 5.0 51.0 2.0 60.7 82.4 0.107 5kp54 60.0 73.3 5.0 54.0 2.0 51.9 96.3 0.107 5kp54a 60.0 66.3 5.0 54.0 2.0 57.4 87.1 0.107 5kp58 64.4 78.7 5.0 58.0 2.0 48.5 103 0.107 5kp58a 64.4 71.2 5.0 58.0 2.0 53.4 94 0.107 5kp60 66.7 81.5 5.0 60.0 2.0 46.7 107 0.108 5kp60a 66.7 73.7 5.0 60.0 2.0 51.7 97 0.108 5kp64 71.1 96.9 5.0 64.0 2.0 43.9 114 0.108 5kp64a 71.1 78.6 5.0 64.0 2.0 48.5 103 0.108 5kp70 77.6 95.1 5.0 70.0 2.0 40.0 125 0.108 5kp70a 77.8 86.0 5.0 70.0 2.0 44.2 113 0.108 5kp75 83.3 102 5.0 75.0 2.0 37.3 134 0.108 5kp75a 83.3 92.1 5.0 75.0 2.0 41.3 121 0.108 5kp78 86.7 106.0 5.0 78.0 2.0 36.0 139 0.108 5kp78a 86.7 95.8 5.0 78.0 2.0 39.7 126 0.108 5kp85 94.4 115 5.0 85.0 2.0 33.1 151 0.108 5kp85a 94.4 104 5.0 85.0 2.0 36.5 137 0.110 5kp90 100 122 5.0 90.0 2.0 31.3 160 0.110 5kp90a 100 111 5.0 90.0 2.0 34.2 146 0.110 5kp100 111 136 5.0 100 2.0 27.9 179 0.110 5kp100a 111 123 5.0 100 2.0 30.9 162 0.110 5kp110 122 149 5.0 110 2.0 25.5 196 0.112 5kp110a 122 135 5.0 110 2.0 28.2 177 0.112 notes: (1) v (br) measured after i t applied for 300 s i t =square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all items and symbols are consistent with ansi/ieee c62.35 application the 5kp series of high power transient voltage suppressors were designed to be used on the output of switching power supplies. t hese devices may be used to replace crowbar circuits. both the 5 and 10 percent voltage tolerances are referenced to the power supply output voltage level. they are able to withstand high levels of peak current while allowing a circuit breaker to trip or a fuse blow before shorting. this will enable the user to reset the breaker or replace the fuse and continue operation. for this type operation, it is recommended that a sufficie nt mounting surface be used for dissipating the heat generated by the transient voltage suppressor during the transient or over-voltage con dition. transient voltage suppressors are silicon pn junction devices designed for absorption of high voltage transients associated wit h power disturbances, switching and induced lighting effects.
5kp5.0 thru 5kp110a vishay semiconductors www.vishay.com document number 88308 4 14-jan-02 0 50 100 150 200 0 25 50 75 100 25 75 125 175 0.1 s 1.0 s 10 s 100 s 1.0ms 10ms 0.1 1.0 10 100 1 10 100 200 100 1,000 10,000 100,000 1 10 100 200 300 400 500 450 350 250 0 25 50 75 100 125 150 175 200 0 6 8 4 2 fig. 1 - peak pulse power rating curve fig. 5 - steady state power derating curve fig. 6 - maximum non-repetitive forward surge current fig. 2 - pulse power derating curve fig. 4 - typical junction capacitance non-repetitive pulse waveform shown in fig. 3 t a = 25 c td, pulse width p ppm , peak pulse power (kw) t l , lead temperature ( c) p pm(av) , steady state power dissipation (w) v wm reverse stand-off voltage (v) c j , junction capacitance (pf) number of cycles at 60 h z i fsm , peak forward surge current (a) t a - ambient temperature ( c) t j = 25 c f = 1 mhz vsig = 50mvp-p measured at zero bias measured at stand-off voltage, v wm 60 h z resistive or inductive load 0.375" (9.5mm) lead length 0.8 x 0.8 x 0.040" (20 x 20mm) copper heat sink 8.3ms single half sine-wave (jedec method) 0 50 100 150 i ppm peak pulse current, % i rsm fig. 3 pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak value i ppm half value ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t time (ms) peak pulse power (p pp ) or current (i pp ) derating in percentage, % ratings and characteristic curves (t a = 25 o c unless otherwise noted)
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